unisonic technologies co., ltd 18n25 p ower mosfet www.unisonic.com.tw 1 of 5 copyright ? 20 1 3 unisonic technologies co., ltd qw - r502 - 786.b 18a , 250 v n - channel power mosfet ? description the utc 18n 25 is an n - channel enhancemen t mode p ower mos fet us ing utc?s advanced planar stripe and dmos technology to provide perfect performance. this technology can withstand high energy pulse in the avalanc he and commutation mode. it can provide minimum on - state resistance and high switching speed. this device is generally applied in active power factor correction and high efficient switched mode power supplies. ? features * r ds(on) = 0. 16 @ v gs =10 v * high s witching speed ? symbol 1.gate 3.source 2.drain to-220f to-263 1 1 ? ordering information order ing number package pin assignment packing lead free halogen free 1 2 3 18n25 l - tf3 - t 18n25 g - tf3 - t to - 220f g d s tube 18n2 5 l - tq2 - t 18n25 g - t q2 - t to - 263 g d s t ube 18n25 l - tq2 - r 18n25 g - t q2 - r to - 263 g d s tape reel note: pin assignment: g: g ate d: d rain s: source (1) t: tube, r: tape reel (2) tf 3: to-220f, tq2: to-263 (3) l: lead free, g: halogen free 18n25l -ta3 -t (1) packing type (2) package type (3) lead free
18n25 p ower mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw - r502 - 786.b ? absolute maximum ratings ( tc=25 c , unless otherwise specified ) parameter symbol r atings unit drain to source voltage v ds s 250 v gate to source voltage v gs s 20 v drain current continuous i d 18 a pulsed (note 2 ) i d m 72 a avalanche energy single pulsed (note 3) e as 945 m j avalanche current (note 2 ) i ar 18 a power dissipation t o -220f p d 40 w to - 263 138 c junction temperature t j +150 c storage temperature t stg - 55 ~ +150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings o nly and functional device operation is not implied. 2. repetitive rating: pulse width limited by maximum junction temperature 3. starting t j =25c , l=5.2mh, i as =18a, v dd =50v, r g =25 . 4 . drain current limited by maximum junction temperature . ? thermal data parameter symbol rating s unit junction to ambient ja 62.5 c /w junction to case to - 220f jc 3.1 c /w to - 263 0.9 c /w ? electrical character istics (t c =25c , unless other wise specified ) parameter symbol test conditions min typ max unit off characteristics drain - source breakdown voltage b v dss v gs =0v, i d =250 a 250 v drain - source leakage current i dss v ds = 250 v, v gs =0v 1 a gate - source leakage current forward i gss v gs = 20 v, v ds = 0 v 100 na reverse v gs = - 20 v, v ds = 0 v - 100 on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250 a 2 .0 4 .0 v drain - source on - state resistance r ds( on ) v gs =10v, i d = 18 a 0. 16 0. 24 dynamic parameters input capacitance c iss v ds =25v,v gs =0v, f=1.0mhz 220 0 286 0 pf output capacitance c oss 330 430 pf reverse transfer capacitance c rss 25 40 pf switching parameters total gate charge q g v ds = 125 v, v gs =10v, i d = 18a (note 1 , 2 ) 30 4 5 nc gate - source charge q gs 10 nc gate - drain charge q gd 10 nc turn - o n delay time t d(on) v dd = 3 0 v, i d = 18a, r g =25 (note 1 , 2 ) 15 25 ns turn - o n rise time t r 130 195 ns turn -o ff delay time t d(off) 30 45 ns turn - o ff fall time t f 100 150 ns source - drain diode ratings and characteristics maximum body - diode continuous current i s 18 a maximum body - diode pulsed current i sm 72 a drain - source diode forward voltage v sd i s = 18 a, v gs =0v 1. 4 v note: 1. pulse test : pulse width300s, d uty cycle 2% 2. essentially independent of operating temperature
18n25 p ower mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw - r502 - 786.b ? test circuit s and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver peak diode recovery dv/dt test circuit & waveforms v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv /dt v dd v sd body diode forward voltage drop i fm , body diode forward current
18n25 p ower mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw - r502 - 786.b ? test circuit s and waveforms (cont.) gate cha rge 50k? 300nf dut v ds 10v 12v charge q gs q gd q g v gs v gs 200nf same type as dut 3ma test circuit waveforms resistive switching v gs dut r g v ds r d v ds v gs 90% 10% t d(on) t r t f t d(off) 10v t on t off v dd t est circuit waveforms unclamped inductive switching 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd test circuit waveforms
18n25 p ower mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw - r502 - 786.b ? typical characteristics drain current vs . drain -source breakdown voltage drain current , i d (a) drain -source breakdown voltage , bv dss (v) 0.6 0 drain current vs . gate threshold voltage drain current , i d (a) gate threshold voltage, v th (v) 1.8 2.4 3.6 1.2 3.0 0 50 100 150 200 250 300 0 60 180 240 300 120 0 50 100 150 200 250 300 drain -source on-state resistance characteristics drain current , i d (a) drain to source voltage , v ds (v) 0 8 0 0.5 1 1.5 4 12 2.5 0 drain current vs . source to drain voltage source to drain voltage, v sd (v) drain current , i d (a) 0.2 0.4 0.6 0.8 1.2 0 5 10 20 25 2 15 1.0 16 20 v gs =10v, i d =14a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
